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Growing single‐crystal semiconductors directly on an amorphous substrate without epitaxy or wafer bonding has long been a significant fundamental challenge in materials science. Such technology is especially important for semiconductor devices that require cost‐effective, high‐throughput fabrication, including thin‐film solar cells and transistors on glass substrates as well as large‐scale active...
A method for the growth of high‐quality single‐crystal germanium on amorphous silicon by ultrahigh vacuum chemical vapor deposition at temperatures less than 450 °C is presented on page 1049 by Jurgen Michel and co‐workers. The growths proceed through constrictive channels and emerge with improved properties compared to as‐deposited germanium. The growth mechanism and its implications for design of...
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