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A dielectric constant of 27 was demonstrated in the as deposited state of a 5nm thick, seven layer nanolaminate stack comprising Al 2 O 3 , HfO 2 and HfTiO. It reduces to an effective dielectric constant (k eff ) of ∼14 due to a ∼0.8nm interfacial layer. This results in a quantum mechanical effective oxide thickness (EOT) of ∼1.15nm. After annealing at 950°C in an oxygen...
High quality nanolaminate stacks consisting of five Al2O3-HfTiO layers with an effective dielectric constant of about 22.5 are reported. A dielectric constant for binary HfTiO thick films of about 83 was also demonstrated. The electrical characteristics of as-deposited structures and ones which were annealed in an O2 atmosphere at up to 950 degC for 5-10 min were investigated. Two types of gate electrodes:...
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