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In this paper, we mainly study the UV irradiation and soak time effect on the leakage current of BLT thin films. The BLT thin films were prepared on Pt/Ti/SiCVSi substrates to get the desired thickness of about 365 nm. The newly formed multilayer films were annealed at 750 °C for 1 h in oxygen ambient. The Pt top electrodes, with a size of 0.0314 mm2 or so, were deposited by sputtering. The leakage...
A growing need for eco-friendly energy sources have led recently to a frantic search of new compositional systems for photovoltaic applications. The nanocomposite titania-germanium (TiO2-Ge) systems represent a new viable family of optoelectronic materials. Their structural, optical and electronic properties can be easily tailored by customizing the density and size of Ge dots in the TiO2 matrix....
In this work structural properties of TiO2 thin films doped with different amounts of Nd have been presented. Thin films were deposited on silicon substrates using high energy reactive magnetron sputtering process and for the measurements TiO2 doped with 0.84 at. % and 8.51 at. % of Nd have been selected. Diversification of the thin film surface was investigated using atomic force microscope. The...
Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested...
The precursor Zn3N2 films were deposited on quartz glass substrates by reactive DC magnetron sputtering and oxidized in situ at various temperatures by introducing pure oxygen gas directly into the deposition chamber. X-ray diffraction (XRD), scanning electron microscopy (SEM), UVNIS transmittance, Hall-effect measurements and photoluminescence (PL) were carried out to investigate the structural,...
Vanadium doped ZnO films with the doping concentration of 0.8% were deposited onto glass substrates at different sputtering pressures by direct current (DC) reactive magnetron sputtering using a zinc target doped with vanadium. The effect of the sputtering pressures (5*10-3 - 3*10-2 mbar) on the structural properties of the deposited films have been studied by X-ray diffraction (XRD), scanning electron...
Aluminum-doped zinc oxide (ZnO:Al) films were deposited by RF magnetron on p-Si(111) substrates to fabricate Al-doped/p-Si heterojunctions. The structural and electrical properties of the Al-doped ZnO films were characterized by X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and Hall effect measurement, respectively. The results show that Al-doped ZnO thin films have high...
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