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This paper derives a novel continuum of Doherty power amplifier (PA) solutions with enhanced load modulation over an extended RF bandwidth. It is analytically shown that Doherty PAs with efficiency peaks at maximum power and at an arbitrary back-off level can be achieved with numerous configurations of output power combiner. Generalized governing equations for carrier and peaking transistor current...
In this paper, an outphasing power amplifier (PA) made using 2×30W GaN HEMTs and operated in deep class-C bias is presented. The design methodology along with some practical design aspects is also considered. The paper reports a working novel operational concept of outphasing with unmatched combiner, showing a potential to deliver more than 40% drain efficiency at 10 dB Power Back Off (PBO).
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