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Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed,...
In this paper the impact of pulse-loads on a six-pack IGBT power module is presented using Finite Element (FE) computations. The FE model solves the heat transfer equations which determine the thermal behavior of the six-pack IGBT module. The approach is such that the IGBT switching loss is calculated using a time domain circuit simulation model, then the results are used as input data for the FE...
The estimation of the power loss and associated transient junction temperature of power devices has become a major issue with the increase of the current density and high switching frequency. Thus, the problem of power device temperature response to fast heat-source changes is of concern. This paper presents a new methodology, which describes the evolution of the complete temperature field in power...
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