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A 1.2 V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package incorporating 16-die stacked 512-Gb NAND flash memories and F-Chip is presented. To meet the performance requirements of storage devices for higher capacity and faster data throughput, the 2nd generation F-Chip is developed. The F-Chip presents a dual bi-directional transceiver architecture including data retiming and training techniques...
Dynamic timing errors (DTEs), that are caused by the timing violations of sensitized critical timing paths, have emerged as an important threat to the reliability of digital circuits. Existing approaches model the DTEs without considering the impact of input operands on dynamic path sensitization, resulting in loss of accuracy. The diversity of input operands leads to complex path sensitization behaviors,...
The demands on higher bandwidth with reduced power consumption in mobile market are driving mobile DRAM with advanced design techniques. Proposed LPDDR4 in this paper achieves over 39% improvement in power efficiency and over 4.3 Gbps data rate with 1.1 V supply voltage. These are challenging targets compared with those of LPDDR3. This work describes design schemes employed in LPDDR4 to satisfy these...
The demands on higher bandwidth with reduced power consumption in mobile market are driving mobile DRAM to have advanced design techniques. Proposed LPDDR4 in this paper achieves over 30% improved power efficiency and over 4.3Gbps data rate with 1.1V supply voltage. These are challenging target comparing with that of LPDDR3. This works includes various techniques including multi-channel per die, various...
A 1Tbit/s bandwidth PHY is demonstrated through 2.5D CoWoS platform. Two chips: SOC and eDRAM have been fabricated in TSMC 40nm CMOS technology and stacked on another silicon interposer chip in 65nm technology. Total 1024 DQ bus operating in 1.1Gbit/s with Vmin=0.3V are proven in experimental results. A novel timing compensation mechanism is presented to achieve a low-power and small area eDRAM PHY...
With multi Gigabit data rates, high speed memory devices run into limitations of the timing margins for data paths on low-cost PCB material. In order to keep system cost low, training mechanisms adapt the timing of two link partners. These mechanisms often represent a challenge for ATE-based test of such devices since the ATE has to have the versatility to adapt to the training mechanisms used by...
In this paper, low complexity acquisition of UWB telemetry data packets is addressed. In addition to the usual channel impairments considered of additive white Gaussian noise (AWGN) noise and multipath, the sensor clock is assumed to be unsynchronized relative to the access node such that there is a random clock offset. The proposed method involves a multi-hypothesis outer search over the arrival...
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