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Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.
In Metal Organic Molecular Beam Epitaxy (MOMBE) the selective area epitaxy (SAE) of double heterostructures (DH) lasers was investigated by using as group V starting materials tertiarybutylarsine/tertiarybutylphosphine (TBAs/TBP), ditertiarybutylarsine/ditertiarybutylphosphine (DTBAs/DTBP) and AsH 3 /PH 3 . In Zn-doped InP layers a reduced doping efficiency was found for the process...
The growth of high purity InP layers using trimethylindium (TMIn) and different commercial tertiarybutylphosphine (TBP) batches as well as ditertiarybutylphosphine (DTBP) as a new phosphorous precursor was studied in a production type metalorganic molecular beam epitaxy (MOMBE) growth chamber. The cracking behaviour of TBP was investigated by mass spectrometry. Increasing the beam equivalent pressure...
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