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The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional...
The US Navy's recent reduction of the dc bus voltage for the new surface combatant, from the original 20 kV to the new target of 12 kV, opens up the design space to a broader range of options than was possible to date. This paper is an attempt to address the opportunities and risks associated with the adoption of multi-level topologies and Silicon-Carbide switches in the design of power converters...
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. After that, Esw of a 650V GaN-HEMT is measured in hard switching condition and is compared with that...
This paper presents the performance of silicon carbide (SiC) switches in a series-loaded resonant (SLR) converter with dual control (DuC). It is shown that the SiC metal oxide-semiconductor field-effect transistor (MOSFET) with DuC increases the overall efficiency of the SLR converter compared to frequency modulation (FM). For the SiC bipolar junction transistors (BJT), the loss reduction with DuC...
A multiphase all-SiC dc/dc bidirectional converter for plug-in-hybrid electric vehicles (PHEV) is described in this paper that serves as a regulated charger for the intermediate high-voltage energy storage device (e.g. ultracapacitor) in the motoring mode and allows recharging of the batteries during regenerative mode. The primary focus of this paper is to describe the design of the converter and...
We describe an all-SiC 0.25 MHz 5 kW multiphase dc/dc bidirectional boost converter that serves as a charger for the intermediate high-voltage energy storage device (e.g. ultracapacitor) in a plug-in-hybrid vehicle (PHEV). The primary focus of this paper is to report the high-temperature efficiency of the SiC VJFET and SiC Schottky based robust converter and identify the key loss components.
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