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In standard power cycling tests, forward conduction generates heat in the die and therefore the ther-momechanical stress in the package. In application, however, a significant part of the power losses are switching losses, so that the load current is lower than in standard power cycling test, for an equal temperature swing. A new concept for power cycling tests is presented, which allows the generation...
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
Due to the limitation in circuit measurements using current and voltage probes, the conventional ways of measuring switching losses lack the physical insight of the complicated witching process in power devices such as the SiC power MOSFET. This paper seeks to have a better understanding of the dynamic turn-on and turn-off processes of the SiC power MOSFET. Using a detailed finite element simulation...
In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET. The switching losses of these three combinations are analysed to find the best combination of MOSFET...
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