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In this work, a gate driver with multiple stages based on switched resistors is presented. The influence of the different stages on the turn-on and on the turn-off behaviour is investigated using experimental measurements conducted on a double pulse test bench. It is shown that, compared to a single-stage reference driver, switching loss improvements are possible while maintaining the same voltage...
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
Due to the limitation in circuit measurements using current and voltage probes, the conventional ways of measuring switching losses lack the physical insight of the complicated witching process in power devices such as the SiC power MOSFET. This paper seeks to have a better understanding of the dynamic turn-on and turn-off processes of the SiC power MOSFET. Using a detailed finite element simulation...
In this paper, we present a comprehensive evaluation of the latest 600 V class Gallium Nitride based Gate Injection Transistor (GaN-GIT) for high temperature and high efficiency applications. In this study, the Panasonic GITs are used as the reference for latest GaN-GIT technology. Static and dynamic testing was performed on the two GaN-GIT versions to extract critical static parameters and switching...
There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achieve better switching behaviour and lower EME without a major increase...
In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curvetracer...
An analytical model is proposed in this paper to calculate the switching loss of low voltage enhancement mode Gallium Nitride high electron mobility transistors (eGaN HEMTs). The switching process is illustrated in detail. The switching loss is obtained by solving the equivalent circuits during the switching transition. A good agreement is shown between the analytical model and Spice simulation results...
Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out...
This paper investigates the effect of the conducted EMI (Electromagnetic Interference) and the switching loss which occurs from the switching devices in the switching period of the unipolar and limited unipolar switching circuits. The three main sources of conducted EMI and switching loss in the unipolar and limited unipolar switching circuit come from the switching devices, the number of switching...
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