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We report the first demonstration of a strained In0.53 Ga0.47As channel n-MOSFET featuring insitu doped In0.4Ga0.6As source/drain (S/D) regions. The insitu silicondoped In0.4Ga0.6As S/D was formed by a recess etch and a selective epitaxy of In0.4Ga0.6As in the S/D by metal-organic chemical vapor deposition. A lattice mismatch of ~ 0.9% between In0.53Ga0.47As and In0.4 Ga0.6As S/D gives rise to lateral...
We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In0.4Ga0.6As S/D on the In0.53Ga0.47As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated SiH4+NH3 passivation for reduction of interface state density on In0.53Ga0.47As for the first time.
This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230 cm2/V-s. The shortest 40 nm gate length (LG) transistors achieve peak transconductance (Gm) of 510 muS/mum and cut-off frequency (fT) of 140 GHz at...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
For the first time strain additivity on III-V using prototypical (100) GaAs n- and p-MOSFETs is studied via wafer bending experiments and piezoresistance coefficients are extracted and compared with those for Si and Ge MOSFETs. Further understanding of these results is obtained by using multi-valley conduction band model for n-MOS and performing k.p simulations for p-MOS. For GaAs n-MOSFET, uniaxial...
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