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The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 % have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 % is incorporated. However, the further increase of In content to...
In the last decade several prototypes of intermediate band solar cells (IBSCs) have been manufactured. So far, most of these prototypes have been based on InAs/GaAs quantum dots (QDs) in order to implement the IB material. The key operation principles of the IB theory are two photon sub-bandgap (SBG) photocurrent, and output voltage preservation, and both have been experimentally demonstrated at low...
In this work we present strain balanced InAs quantum post of exceptional length in the context of photovoltaics. We discuss the general properties of these nanostructures and their impact in the practical implementation of an intermediate band solar cell. We have studied the photocurrent generated by strain balanced quantum posts embedded in a GaAs single crystal, and compared our results with quantum...
The concepts of (1) Carrier-Multiplication (CM - ??two electron-hole pairs from one photon??) and (2) Intermediate Band Solar Cell (IBSC) based on nanostructures, have created significant interest and excitement, but, at the same time, raised questions pertaining to the approaches used to argue their validity. In part, confusion arose because the initial arguments made were based on rather qualitative,...
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