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This paper demonstrates the use of the transfer matrix method (TMM) to estimate the confined energy levels and their respective wavefunction of complex heterostructures in both valence and conduction band. The potential profile of the structure is sliced and made constant within each layer. By solving the Schro??dinger equation for a constant potential in each slice and using the continuity of the...
The electronic band structure of relaxed and biaxially strained Si, Ge, III-V semiconductors (GaAs, GaSb, InAs, InSb, InP) and their alloys (InxGa1-xAs, InxGa1-xSb) on different interface orientations, (001), (110) and (111), is calculated using the nonlocal empirical pseudopotential method (EPM) with spin-orbit interaction using cubic spline interpolations of the atomic form factors. For III-V alloys,...
This paper presents electronic structure of InAs/GaAs quantum dots in (111) direction. The cubic and truncated pyramidal shaped quantum dots are adopted. The electronic energy levels are calculated by solving a three-dimensional effective mass Shrödinger equation including a strain modified confinement potential and piezoelectric effects.
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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