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Titanium dioxide thin films were prepared by sol-gel method on Si (110) substrates after annealed at 650 degC. Schottky diodes of Cr/TiO2, Au//TiO2 and Ni/TiO2 were fabricated by RF magnetron sputtering, and the electrical properties of the diodes were investigated. The effective barriers Phib and ideal factors n were calculated from thermionic emission model, and it was found that the height of Schottky...
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