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After the fourth passive circuit element (Memristor) came to existence in 2008 its tremendous potential to be used as a replacement for MOSFETS made its mathematical modeling very imperative. Various device models for the memristor had been proposed earlier such as the linear ion drift model, non linear ion drift model, tunnel barrier model, and a recently proposed TEAM model. In case of linear ion...
In this paper we present strategies that can potentially improve the accuracy of photovoltaic (PV) simulation models. Generally, output performance levels vary in similar types of photovoltaics. We have categorised different model parameters and highlighted their potential impacts because of the tolerance limits from PV manufacturers. We have focused on the fill factor (FF) to express the characteristics...
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