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Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable island nanodots, with the measured comparable to the predicted values.
With device scaling, the introduction of emerging materials including nanowires and nanodots is required more than ever. We present several examples of making nanomaterials based on advanced thin film deposition techniques including atomic layer deposition, supercritical fluid deposition (SCFD), and selective epitaxial growth (SEG), and nanohybrid process utilizing self-assembled nano-template. Metallic...
Several nanoscale arrays of metallic, semiconductor, and organic carbon compounds (carbon nanopearls) have been fabricated on nanoporous flexible alumina and silicon templates based on a new self-assembly growth mode. They were obtained using pulsed laser deposition, thermal evaporation, e-beam evaporation, or RF magnetron sputtering. The different moieties that were observed include nanodomes and...
GaN dots on AlN layers were grown on sapphire substrates by rf-nitrogen plasma molecular beam epitaxy. Size control of QDs by strain modification using various growth techniques is demonstrated to achieve emission energies ranging from 2.5 eV to 3.9 eV . In self-organized GaN QDs, the quantum confinement effect observed in the "classical" GaAs-based QD or QW, is offset by the large piezoelectric...
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