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Self assembled Cu3Si nanoislands and nanowires on Si(110) were fabricated with electron beam evaporation in ultra high vacuum while annealing the substrate at 600 ° C. Scanning tunneling microscopy technique was used to study the resultant nanostructures of sub 10 nm size. Surface images of a nanoisland and nanowire were obtained. The former showed evidence of single crystalline structures. The length,...
This paper presents material properties of self-assembled Cu nanowires that were fabricated in the vacuum e-beam evaporation method. Diffraction patterns obtained from the Transmission Electron Microscopy (TEM) indicate that the Cu nanowires have two slightly different properties: single crystalline structures and polycrystalline structures with low angle grain boundary. Focused ion beam (FIB) was...
CdTe nanowires have been self-assembled in solution from the individual CdTe nanocrystal building blocks. Individual wires preserve the bright luminescence of CdTe nanocrystals and have been studied by photoluminescence measurements at variable temperature and by fluorescence lifetime imaging microscopy. The wires represent quantum dot solids with a strong degree of electronic coupling between the...
Ni nanowires (NWs) are driven in water using a rotating magnetic field. The NWs show various locomotion performances under different boundary conditions. Pure rotation occurs when the two ends of the NWs are homogenously constrained. However, if the boundary conditions are different at the two ends of the NWs, tumbling motion, i.e., rotation plus translation, will be generated, which leads to the...
Materials at the nanoscale have recently attracted much attention due to their high potential for technological applications and to their size-dependent optical, nonlinear optical, electronic and chemical properties as well as their potential for incorporation into electronic circuits at the nanoscale. In particular, metal nanoparticles have been widely applied due to their ease of synthesis, stability...
Semiconductor nanowires have emerged as credible candidates for the development of the semiconductor roadmap by which Moorepsilas law may be extended beyond the 20 nm dimension. This technology is based on self-assembly or bottom-up growth, leading to local epitaxial nucleation of the semiconductor crystal and the controlled growth of a one-dimensional crystal. In this talk I will describe the present...
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