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Self-assembling ordered ZnO nanowire (NW) network-based field-effect transistors (FETs) were fabricated by bottom-up photolithography. The devices had on/off ratios of >; 104, mobilities of ~1.31 cm2 V-1 s-1, mobilities of and threshold voltages of ~-1 V. Under UV treatment (340 nm, 57.46 ), the devices exhibited relative photoconductivity ratio increases of at a depletion state of 8 V gate...
Wire array or nanowire based silicon solar cells based upon radial p-n junctions have been investigated over the past few years for enhanced light trapping, as well as for being able to offer radial junctions that are in close proximity to photogenerated carriers. To date, however, silicon wire array cells have not been able to demonstrate efficiencies higher than their planar controls. We have studied...
UV (ultra violet)-enhanced oxygen sensing using ZnO (zinc oxide) nanowires has been successfully demonstrated with improved sensitivity. These single-crystalline nanowires are grown by the VLS (vapor-liquid-solid) process using inductive heating and self-assembled between two MEMS microstructures by the technique of local vapor deposition. Under 365-nm UV illumination, the as-fabricated device shows...
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