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This paper presents a minority carrier lifetime extraction method using transient photovoltage method. The excitation light source is a picosecond pulsed infrared laser. A parallel resistance has been introduced to minimize the effect of the equivalent junction series resistance effect. A storage oscilloscope has been used to record the photovoltage of the photodiode. By fitting the exponentially...
InAs/AlSb/AlGaSb heterojunction backward diodes are promising detectors for millimeter-wave imaging applications due to their high sensitivity, low noise, and high cutoff frequency. By using a device heterostructure with a thin (11 Å) barrier layer, δ-doped cathode, and optimized AlxGa1-xSb anode composition (x=12%), in conjunction with submicron (0.4×0.4 μm2) active area, fabricated detectors have...
New zero-bias Schottky diodes with low junction capacitance and low differential resistance are characterized by applying DC and S-parameter measurements from 65–110 GHz. Diode versions with short and open circuits at the diode's anode as well as biased measurements of the diode allow an advanced investigation to model the diode's equivalent circuit. The extracted parameters provide an accurate RF...
The state of the art in millimeter-wave detection and imaging using Sb-heterostructure detectors has been advanced recently with demonstration of excellent low-noise performance through the use of very thin (< 15 Aring) tunnel barriers. This reduction in tunnel barrier thickness improves the noise by reducing the thermal noise associated with the junction resistance, Rj. However, the thinner barrier...
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