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High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) on low temperature GaN (LT-GaN) nucleation layers deposited by HVPE. The (0001) sapphire substrates were used. The LT-GaN process parameters were as follows: HCl flow rate was 10 sccm/min, temperature 450degC and deposition time intervals 7 and 9 minutes for sample #1 and #2, respectively. The values...
High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) method on low temperature GaN (LT-GaN) buffer layers deposited by HVPE or MOVPE method and on double MOVPE LT-GaN/AIN buffers. The (0001) sapphire substrates were applied. The HCl flow rate and deposition time intervals of nucleation layer deposition were varied in the range of 8-10 ml/min and 5-9 min...
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