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Nanodiamond with dielectric strength greater than 2MV/cm was grown by microwave plasma enhanced chemical vapor deposition and used as a leaky dielectric film for RF MEMS capacitive switches. Nanodiamond films grown by MPECVD were compared with Si3N4 films deposited by RFPECVD by means of transient current measurements. Nanodiamond was characterized by SEM, AFM and Raman spectroscopy for correlation...
Boron-doped nanodiamond (NCD) films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of vacuum annealing on the field emission characteristics of NCD films has been investigated. The surface morphology and quality of films was characterized by scanning electron microscope (SEM) and Raman spectroscopy. The SEM images clearly reveal formation...
Summary form only given: A diamond thin film has many attractive properties such as high hardness, large heat conductivity etc. Microwave plasma chemical vapor deposition (MWPCVD) is an effective method for producing a diamond thin film. However, the deposition rate of the conventional low-pressure MWPCVD is very low. Recently, the authors have succeeded to produce a diamond thin film on a Si substrate...
Summary form only given. For wide application of the CVD diamond in output windows of high-power microwave sources it is necessary to establish a CVD process for production of thick diamond films with controlled quality. Currently there are some microwave plasma CVD (MPACVD) reactors at 2.45 GHz frequency which may be used for this purpose. In our experiments polycrystalline high-quality diamond films...
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