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Graphene synthesis technology on substrates is promising, as is compatible with existing CMOS-technology. Knowledge about how to affect the substrate of choice for structural and electronic properties of graphene is important and opens up new opportunities in targeted influence on the properties of this unique material. Specialized measuring system was established to measure the galvanomagnetic characteristics...
In this paper, the recent development of graphene FETs on a wafer scale, including DC and RF performance is presented. The epitaxial growth of graphene is under development on two-inch wafers using both Si-sublimation of Si or C-face SiC(0001) substrates and graphene growth using MBE. The quality of graphene is characterized by Raman spectroscopy and TEM (transmission electron microscopy). The graphene...
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