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Local mechanical stresses in semiconductor devices, introduced e.g. by dicing, are an important manufacturing concern. Raman spectroscopy can measure stress in silicon directly, non-destructively and quantitatively. Here, we used Raman spectroscopy to analyse the stress along die sidewalls formed by mechanical and laser dicing, demonstrating that micro-Raman spectroscopy is a feasible sensing method...
Raman spectroscopy is a laser-based vibrational technique that can provide spectral signatures unique to a multitude of compounds. The technique is gaining widespread interest as a method for detecting hidden explosives due to its sensitivity and ease of use. In this letter, we present a computationally efficient classification scheme for accurate standoff identification of several common explosives...
This paper mainly discussed standoff explosive detection methods based on Raman spectroscopy. To enhance Raman Scatter efficiency and reduce noises from outside, coherent anti-Stokes Raman scatter(CARS), resonance enhancement, surface enhancement, surface-enhanced resonance Raman scattering and pulsed laser Raman scatter were used in remote Raman spectroscopy detection.
Spatially Offset Raman Spectroscopy (SORS) and Transmission Raman Spectroscopy (TRS) are methods for analysing bulk turbidly scattering materials such as powders, tablets, suspensions and other chemical mixtures, and provides non-invasive measurements with high selectivity and sensitivity. They can be effectively used for non-invasive probing of the content of pharmaceutical capsules and tablet and...
Silicon carbide (SiC) is a suitable wide band gap semiconductor for high power and frequency electronic devices. The most important advantages of the material are good thermal conductivity and high breakdown voltage. Surface oxidation of SiC wafers results in forming of native SiO2 layer on the surface of the substrate. However, the material has significant drawbacks. The most important one for the...
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