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Recently, copper sulfide which was formed by corrosive sulfur in transformer oil reacting with copper windings caused many faults of high voltage electric equipments. Online detection of dibenzyl disulfide (DBDS) has become a new way of avoiding happening major accident. Comparing with the traditional monitoring technologies, Laser Raman spectroscopy (LRS) has incomparable advantages, such as non-contact...
ABSTRACT-Recently, copper sulfide which was formed by corrosive sulfur in transformer oil reacting with copper windings caused many faults of high voltage electric equipments. Online detection of dibenzyl disulfide (DBDS) is the key to avoid happening major accident. Comparing with the traditional monitoring technologies, Laser Raman spectroscopy (LRS) has incomparable advantages, such as non-contact...
This paper reports direct in-situ stress measurements with microscale spatial resolution in glass using Raman spectroscopy. This new technique is used to assess the reliability of copper-plated laser-drilled through package vias (TPV) in ultra-thin bare glass interposers. Bare glass panels of 3"x3" size, with 137µm and 237µm thicknesses were fabricated with laser-drilled through-package...
This paper reports on the Raman shifts corresponding to strain induced in graphene films. A direct correlation is demonstrated between the shifts in the D, G and 2D peaks of graphene compared to the characteristic 521cm−1 peak of the underlying silicon substrate. The approach is shown to be suitable for characterizing the graphene Raman spectrum under load conditions.
Single Wall Carbon Nanotubes exhibit outstanding contributions in the recent VLSI interconnections. Interconnects analyzed in VLSI circuits depends on the electrical properties of carbon nanotubes. Metallic carbon nanotubes are very distinct for their ballistic conductivity in nano level interconnections. Different peaks are analyzed in Raman spectroscopy technique for characterizing metallic carbon...
Micro-Raman spectroscopic technique has been employed to study the induced stress/strain by the metal microbumps in 3D-LSI Si die/wafer after wafer thinning and bonding, and the impact of bump spacing, bump size, bonding temperature and bonding force in the stress distribution in such a microbump bonded LSIs has been investigated. It is inferred that (i) the Si present at the interface (between CuSn...
Synthesis of large-area graphene has been realized on the top of copper substrates by chemical vapor deposition (CVD) at ambient pressure with the flow of a mixture of hydrogen and methane gases. The graphene layers were transferred to the oxidized silicon wafers employing a undercutting method. The intense G (1570 cm-1) and 2D (2700 cm-1) bands observed from Raman spectroscopy reveals the presence...
Polycrystalline films of semiconducting Cu(In1-xGax)Se2 (CIGS) quaternary alloy, one of the promising materials for photovoltaic applications, have been prepared by means of chemical spray pyrolysis (CSP). Copper, Indium and Gallium metal chlorides and Selenourea are used as constituent elements to prepare spray solution. Single phase CIGS films with chalcopyrite structure have been successfully grown...
Through-silicon via (TSV) proximity is electrically evaluated for the first time based on a 130-nm CMOS platform. Transistors with TSVs in a two die stacking structure were successfully designed, fabricated and tested. With a minimum distance of 1.1 μm from a 5.2 μm diameter TSV, both PMOS and NMOS showed normal functionality. No performance degradation was identified compared to control cases without...
Non-hydrogenated high sp3 content diamond-like carbon (DLC) has been subjected to intensive research efforts over the last three decades owing to its superior material properties. By introducing some metals/dopants into DLC film during deposition, the microstructure and properties of the films can be further modified, where studies have demonstrated it as an effective method to reduce the internal...
Mechanical stress, crystal defects, and metal contamination in thinned silicon substrates with and without intrinsic gettering (IG) zone have been investigated for three-dimensional (3D) integration. The remnant stress existing after wafer thinning was evaluated using angle-(5deg) polished silicon wafers by micro-Raman spectroscopy (muRS). The metal contamination in the thinned silicon substrates...
One promising application of CNTs in microelectronics is to use vertically aligned CNT (VACNT) arrays as novel thermal interface materials (TIMs). No doubt that the vertical alignment makes the best of the extremely high longitudinal thermal conductivity of individual CNTs; however, it is the CNT/substrate interface that exerts the main restriction on phonon transport through a TIM layer. There are...
In this paper, nonmagnetic elements (Al and Cu) doping effect on the structural and magneto-transport properties of Zn0.85Mn0.15O (ZnMnO) dilute magnetic semiconductors were reported. The structural characterization was performed using XRD, Raman spectroscopy, AFM and SEM. Temperature dependent electrical resistivity, Hall effect, and were carried out using a standard magneto-transport set-up.
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