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The paper is devoted to the features of short-circuit current interruption under the conditions of small-scale distributed synchronous generation connection to medium voltage (MV) and low voltage (LV) power supply systems. Distributed generation (DG) even in a case of the unidirectional power supply has a great impact on overcurrent relay protection sensitivity and selectivity. Connecting DG leads...
This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
The purpose of TAFT fault tolerance studies conducted at CNES is to prepare the space community for the significant evolution linked to the usage of COTS components for developing spacecraft supercomputers. CNES has patented the DMT and DT2 fault-tolerant architectures with 'light' features. The development of a DMT/DT2 testbench based on a PowerPC7448 microprocessor from e2v is presented in this...
A high bandwidth critical path monitor (1 sample/ cycle at 4-5 GHz) capable of providing real-time timing margin information to a variable voltage/frequency scaling control loop is described. The critical path monitor tracks the critical path delay to within 1 FO2 inverter delay with a standard deviation less than 3 FO2 delays over process, voltage, temperature, and workload. The CPM is sensitive...
This paper presents a simulation and experimental study of the analog single-event transient sensitivity of wide bandwidth operational amplifiers. Architecture effects are presented that could influence ASIC design and COTS selection.
A set-up consisting of at least one pulse generator with baseline functionality was used for Transient Latch-up (TLU) investigations. Dependencies of the TLU sensitivity of test structures on the pulse width and the rise time have been analyzed. Device simulation could reproduce the tendencies and reveals the root cause for the dependencies. In a bipolar product, which is immune against static latch-up,...
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