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This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
Polymorphic gates can be considered as a new reconfigurable technology capable of integrating logic functions with sensing in a single compact structure. Polymorphic gates whose logic function can be controlled by the level of the power supply voltage (Vdd) represent a special class of polymorphic gates. A new polymorphic NAND/NOR gate controlled by Vdd is presented. This gate was fabricated and utilized...
Transient faults have become increasingly observable in combinational logic. This is due to the weakening of some inherent protective mechanisms that logic traditionally holds against such flawed spurious events. One of the aforementioned mechanisms relates to the propagation of transient faults along sensitizable paths. Existing literature that relies on logic simulation under estimates the number...
This paper describes a comparative analysis between two topologies of operational amplifiers to design a 40 MS/s 12-bit pipeline analog to digital converter (ADC). The analysis includes AC and transient simulation to select the proper topology. This ADC is implemented in a 0.35 mum AMS CMOS technology with 3.3 V single power supply. The capacitors and selected operational amplifiers were scaled for...
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