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Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO3: a‐STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal‐oxide‐metal (MIM) memristive arrays demonstrating excellent uniformity...
Controlled oxygen deficiencies are realized in amorphous SrTiO3 thin films. On page 6741 H. Nili, S. Sriram, and colleagues utilize these deficiencies to achieve CMOS‐compatible, high performance resistive switching in the room temperature processed thin films. The cover image depicts a cross‐bar arrangement with elements at different switching states. Image courtesy of Ella Marushchenko (Scientific...
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