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Parasitic memory effect can occur due to the impact of parasitic node capacitances and faulty node voltages on the electrical behavior of SRAMs. This memory effect can cause detectable faults to become undetectable using existing industrial tests. This paper analyzes, evaluates and identifies the unique detection conditions for faults in SRAMs. It demonstrates the limitation of existing industrial...
Parasitic node capacitance and faulty node voltage of a defective node can induce serious parasitic effects on the electrical behavior of SRAMs. This paper evaluates the impact of parasitic memory effect on the detection of single-cell faults in SRAMs. It demonstrates that detection is significantly influenced by parasitic node components; something that is often not accounted for during memory testing...
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