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In this paper, EMI research and filter design with shielding method for a MHz switching frequency Gallium Nitride (GaN) based LLC half-bridge resonant DC-DC converter is explored. Firstly, a high-frequency model considering overall electromagnetic coupling effects for both common mode and differential mode is proposed. And EMI prediction during the frequency spectrum from 150 kHz to 30 MHz is illustrated...
This paper examines the nonlinear behavior of inserted type integrated magnetics used in linear level control converters. Due to the nonlinear behavior of the magnetics, an implementation of the insertion type magnetic integration needs to be carefully considered. The saturation of magnetics is normally not a concern in high-voltage input applications, but becomes a serious issue when designing for...
Based on the third generation of semiconductor material, GaN device becomes obvious candidate for new generation POL converters. With the development of integration technology, planar transformer is applied for miniaturization and high power density. LLC resonant converter with EPC eGaN FETs and planar transformer is studies in this paper. First, the difference of LLC resonant converter with eGaN...
LLC resonant converters may be applied as an intermediate converter in low power level micro-grid systems. The field of planar magnetics is continuously pushing its utilization in resonant converters as higher power densities and lower profiles are achieved. The design process for the planar transformer is significant due to the gap being placed on the magnetic core for the proper magnetizing inductance...
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