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Formation of ultra shallow junctions (USJ) with sufficiently low resistance in the source/drain extension (SDE) region is necessary for MOSFETs at the 45-nm node and beyond. Several doping technologies, such as plamsa doping, cluster ion implantation and gas cluster ion beam (GCIB) doping have been studied as possible replacements for conventional sub-keV ion implantation. In this work we used GCIB...
High dopant activation and low implant damage are crucial in realizing the formation of a low resistivity ultra shallow junction (USJ). Future annealing process requires diffusion less activation and has ultimately define the junction depth. Conventional boron implant at ultra-low energies perform poorly in throughput and in energy contamination. Molecular species (B18H22) can provide implants with...
It has been shown that the PIII/PLAD poly-Si gate doping process offers unique advantages over conventional beam line systems, including system simplification, lower cost, higher throughput, and device performance equivalence or improvement. PMOS devices fabricated by a B 2H6/H2 PIII/PLAD process on P+ poly-gate doping are intensively evaluated in this paper. In addition to higher throughput, PMOS...
In this work, combination of the plasma doping method with flush lamp annealing (FLA) or solid-state laser annealing (ASLA) is shown to be very promising technique to form ultra-shallow and low-resistive junctions for future nano CMOS. Amorphisation by He plasma (He-PA process) is shown to be effective for obtaining shallow junction depth (Xj) and low sheet resistance (Rs). The He-PA process is found...
We report on fabricated capacitors following B and BF/sub 2/ implantation with near-identical boron profiles as measured by SIMS. The C-V curves showed flatband shifts between the two implanted species which increase with the implant dose, up to 0.27 V for 1e14 cm/sup -2/. Modeling the processing with an interface trap model for boron in the case of BF/sub 2/ implant but not for B, gave good agreement...
A couple of dopant diffusion models were examined and refined in terms of both diffusion profiles and simulation of device characteristics. The refinement included appropriate binding-energy values for dopant-defect pairs, electrical activation for arsenic, and the boundary condition for the interstitial-silicon. These are directly related to the quantitative simulation of the reverse short-channel...
This paper presents a phenomenological model to account for the channel boron redistribution in NMOS devices caused by implant damage during source drain processing. The model parameters are determined using device I-V characteristics for various channel and source drain implant conditions and can be used to extract effective 2D dopant profiles. The approach presented in this paper allows device simulation...
We have developed the first ever low-energy, high-dosage boron ion implantation technology using a decaborane (B/sub 10/H/sub 14/) molecule. Since B/sub 10/H/sub 14/ consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and a ten times higher effective beam current compared with those of boron. Using this implantation, we achieved an ultra-shallow...
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