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In this paper, ground leakage current suppression in a 60-kW 5-level T-type (5LT2) transformerless SiC photovoltaic (PV) inverter has been presented. The common mode (CM) equivalent circuit is analyzed based on a high frequency (HF) CM loop and a low frequency (LF) CM loop, respectively. In the 5LT2 inverter, the derived HF CM voltage (CMV) is found to have 86% reduction compared to that of a 3-level...
The demand for high-efficiency power converters is increasing continuously. The switching losses are typically significant in power converters. During the switching time, the component is exposed to a considerable voltage and current causing power loss. The switching time is limited by parasitic inductance produced by traces and interconnections inside and outside the package of a device. Moreover,...
Suppression of reverse recovery ringing from 3.3kV Si-IGBT SiC Schottky barrier diode hybrid was verified. Reducing loop inductance, consisting of internal module, busbar connection and capacitor, is effective. To realize low inductance within the module and external connection with busbar, the gap between p and n terminal is minimized whilst maintaining the creepage and clearance required by regulation...
The introduction of 1200 V Silicon Carbide (SiC) based technologies has enabled the use of high performance LLC converters for high input voltage (>500 VDC) applications such as datacenter power conversion. In this paper, we describe performance of the magnetics for a 2 kW-level LLC converter, operating at 100 kHz with SiC devices. We present magnetics designed for high converter efficiencies (>...
The increasing maturity and commercial availability of new fast-switching wide band-gap semiconductor devices, such as normally-off silicon carbide (SiC) junction field-effect transistors (JFETs) and SiC MOSFETs, lead to the possibility of developing highly dense power converters due to their capability of switching at high frequencies and high temperature operation. At high frequencies, the parasitic...
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