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This paper focuses on a new realization method of an Emitter Turn-off Thyristor (ETO). The unity gain turn-off capability of the Gate Commutated Thyristor (GCT) requires extremely low parasitic components within the gate path. The concept of the ETO postulates a MOSFET in the cathode current path of the thyristor, which causes several problems. A new approach leading to a significant smaller and less...
A MOSFET driver exhibits a destructive single-event effect, after which testing done on the device excludes single-event latch-up as the mechanism but suggests single-event burnout (SEB). SEB is normally not seen in device with such low voltages. The design that optimizes high current density and a fast slew of the part may contribute to the sensitivity of the device to SEB.
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