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The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when...
Doherty introduced two types of concepts for high-efficiency linear amplifiers in 1936. One has a shunt connected load and the other has a series connected load. We fabricated a 1.9 GHz GaN HEMT Doherty power amplifier with a series connected load using baluns. The amplifier realized high power efficiency with a wide dynamic range in comparison with a conventional push-pull amplifier. In this paper,...
The paper proposes an IMD characterization methodology representing a further refinement in the state-of-the-art of source-/load-pull for precise evaluation of intrinsic linearity in GaN HEMTs for 3G wideband applications. Presenting constant IF and RF load across wide modulation bandwidth is extremely difficult. By mimicking the amplifier environment, the RF bias tee which has significant influence...
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