The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Signal linearity is becoming an increasingly important requirement for the high power amplifiers used in current wireless communications systems. In this paper we demonstrate an input matching topology to improve the overall linearity performance of the base-station power amplifier. We then show simulation and measurement results using high-power laterally diffused metal oxide semiconductor (LDMOS)...
Radio frequency power amplifiers (RF PA) are widely used for several applications e.g. wireless communication, wireless power transmission (WPT) and radio frequency heating. In general, the choice of power amplifier's operating class is based on requirements regarding linearity and power efficiency. For applications in which linearity is not a critical issue whereas high efficiency is desired, switched-mode...
Integrating a CMOS RF power amplifier (PA) into a single-chip transceiver is one of the most challenging works in implementing radio front-ends, which presents many advantages in handheld applications [1,2]. Especially, low-power efficiency enhancement (LPEE) techniques, considering the probability distribution function of the practical wireless communication environments, extend the battery lifetime...
This paper presents a medium-power amplifier designed in class AB at 2.4 GHz with two transistors of the same type in parallel. Keeping the drain bias of the transistors constant, it is demonstrated that by careful selection of the transistor and dynamically tuning the gate bias of the individual devices and output matching of the whole amplifier according to input drive level, an increase of about...
Doherty introduced two types of concepts for high-efficiency linear amplifiers in 1936. One has a shunt connected load and the other has a series connected load. We fabricated a 1.9 GHz GaN HEMT Doherty power amplifier with a series connected load using baluns. The amplifier realized high power efficiency with a wide dynamic range in comparison with a conventional push-pull amplifier. In this paper,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.