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Au/Cu2O/n-type Si structures have been fabricated and characterized electrically. The structure yields a current rectification of almost 7 orders of magnitude. It is also shown that the structure performs as a metal/semiconductor junction when subjected to CV measurements. The Cu2O film, deposited by radio frequency magnetron sputtering is highly transparent for light of energy below the fundamental...
This paper discusses the characteristics of the InSb/Si heterojunctions. Thin epitaxial layers of the InSb were grown on p-Si substrate by using the surface reconstruction controlled epitaxy. This epitaxial growth technique permits us to grow high quality InSb on Si (111) surface. The n-InSb/p-Si heterojunction pn diodes were fabricated with these samples, and characterized by current-voltage, and...
Mono and polycrystalline silicon solar cell modules currently represent between 85 and 90% of the PV world market. The reasons are the stability, robustness and reliability of this kind of solar cells as compared to those of emerging technologies. Then, in the mid-term, silicon solar cells will continue playing an important role for their massive terrestrial application. One important approach is...
Photovoltaic properties of nitrogen doped amorphous carbon (a-C:N) thin films deposited on p-type silicon (p-Si) and quartz substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at low temperature (<100 degC) are analyzed in this section. Argon (Ar: 200 sccm), methane (CH4:10 sccm) and nitrogen (N: 5 sccm) were used as carrier, source and doping gases respectively...
Phosphorus-doped carbon (n-C) films are deposited on p-type silicon substrate by pulsed laser deposition technique using a camphoric carbon soot target. The band diagram of the n-C/p-Si heterojunction has been constructed from temperature dependence conductivity and optical gap measurements. We have estimated a simple discontinuity in conduction band. The conduction band discontinuity is small (0...
This paper presents further optimization steps of a fabrication process for solar cells with an emitter consisting of an annealed n-type Si/sub 0,8/C/sub 0,2//p-type c-Si heterojunction. We show that emitters produced in this way can have an emitter saturation current density as low as 0.1 pAcm/sup -2/. The emitter then will limit the open circuit voltage of a solar cell to about 690 mV at 1 sun illumination...
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