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Due to its potential applications in optoelectric area, WS2/graphene heterojunction attracts much attention in past years. But until now, modulation of their working performance is still a big challenge for the researchers. In this work, WS2/graphene heterojunctions have been sucessfully fabricated on Si substrate. Moreover, their surface configuration were researched by STM and AFM techniques. Finally,...
Heavily doped GaN nanochannel fin-shaped field-effect transistors (FinFETs) without heterojunction have been fabricated and characterized for the first time. Simplified pragmatical technology for GaN epitaxial growth and FinFET process was used to achieve nanodevices with a channel width from 40 to 100 nm and a gate length of 1 . They exhibit excellent on-state performance, such as maximum...
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