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A high-resolution light-emitting diode (LED) array based on an ordered n-type ZnO nanowire/p-type SiGe heterojunction is proposed. The pixel pitch of the LED array is about 15 μm, corresponding to a pixel density of 1693 dpi. The fabrication and characterizations of the developed LED device are analyzed in detail. The results show that the electroluminescence (EL) emission of this LED device is mainly...
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