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This paper describes efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequencies (8-12 GHz) on three-inch s.i. SiC substrates. Dual-stage MMICs in microstrip transmission-line technology yield a power-added efficiency of ??40% at 8.56 GHz for a power level of ??11 W. A single-stage MMIC yields a PAE of ??55% with 6 W of output power at VDS= 20 V. The related mobile communication...
This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band frequencies in microstrip line technology on thinned s.i. SiC substrates. The design features a modular circuit concept and microstrip MMIC directional couplers with low impedance levels. These 3 dB-couplers designed for a center frequency of 10 GHz show a coupling factor of 3.5 dB plusmn 0.4 dB and...
AlGaN/GaN HEMT using field plate and recessed gate for X-band application was developed on SiC substrate. Internal matching circuits were designed to achieve high gain at 8 GHz for the developed device with single chip and four chips combining, respectively. The internally matched 5.52 mm single chip AlGaN/GaN HEMT exhibited 36.5 W CW output power with a power added efficiency (PAE) of 40.1% and power...
Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects buffer-related lag phenomena and current collapse. It is shown that in both FETs, the lag phenomena...
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