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This paper describes the design, fabrication and measurement of two single-stage class-AB power amplifiers covering the frequency band from 0.7-1.8 GHz using a SiC MESFET and a GaN HEMT. The measured maximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W), with a PAE of 32% and a power gain above 10 dB. At a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with...
This study regards the low noise properties of X-band GaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown on SiC or Si substrates. The HEMTs present very low noise properties with NF/sub min/ and G/sub ass/ close to 1 dB and 13 dB at 12 GHz. The robustness tests show that the component withstands power level up to 34 dBm. A two-stages X-band LNA is fabricated...
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