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This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ~ 0.4V, high reverse blocking voltage (VBR) of ~ 2400V, specific on-state resistance (RON.A) of ~ 14 mΩ.cm2 and...
To achieve the highest power conversion efficiency, heterogeneous chip-scale integration of silicon-based and GaN-based power switches with SiC power diodes, silicon CMOS control IC, MEMS inductor and micro microchip supercapacitor assembled using advanced packaging and microcooling is reported.
As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF applications, GaN HEMTs allow the use of highly efficient class E circuit topologies demonstrating high powers of 63 Watts at 2 GHz with 75% power added efficiency. In broadband WiMax applications, GaN HEMTs offer very wide...
GaN Schottky diodes offer the same performance benefits as SiC-based devices at a significantly lower cost. A 600 V GaN-based Schottky diode was substituted in a power conversion circuit to reduce its size and complexity. The resulting circuit had a higher efficiency and lower operating temperature than a Si-based configuration
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