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This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ~ 0.4V, high reverse blocking voltage (VBR) of ~ 2400V, specific on-state resistance (RON.A) of ~ 14 mΩ.cm2 and...
To achieve the highest power conversion efficiency, heterogeneous chip-scale integration of silicon-based and GaN-based power switches with SiC power diodes, silicon CMOS control IC, MEMS inductor and micro microchip supercapacitor assembled using advanced packaging and microcooling is reported.
In this paper, the numerical design of a optimized quasi-vertical gallium nitride power Schottky diode for high power electronic applications is illustrated. Bevel oxide field plate was employed as a junction termination technique to enhance the breakdown voltage in reverse bias. It was found that a maximum breakdown voltage of 1995 V was obtained for a bevel width of 18 um and oxide thickness of...
We propose a new breakdown mechanism of GaN-based electron devices called ldquonatural super junctionrdquo. The junction model is supported by device simulations and experiments for newly developed multi-channel diodes with a dual-recessed structure. Based on the model, the on-resistance of the diodes can be reduced keeping high breakdown voltages. The fabricated diode achieves extremely high breakdown...
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