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In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×104 when exposing to a 1% H2/air gas at 100°C, and also detect even as low as 50 ppm H2/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s,...
In this paper we discuss the influence of thermally annealed Schottky metal contact on DC and RF characteristics of n-GaN Schottky diode. The fabrication of n-GaN Schottky diode started with mesa mask RIE etching and then lift off Al as an ohmic contact annealed at 400degC in N2 ambient for 10 min. For Schottky contact lift off Pt, Ni and Pd Schottky metal annealed from 400degC to 600degC for 10 min...
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