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Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results in a significant increase (as high as 3.0 times 1020 cm-3) in the electron concentration and a decrease in the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission...
In this paper we discuss the influence of thermally annealed Schottky metal contact on DC and RF characteristics of n-GaN Schottky diode. The fabrication of n-GaN Schottky diode started with mesa mask RIE etching and then lift off Al as an ohmic contact annealed at 400degC in N2 ambient for 10 min. For Schottky contact lift off Pt, Ni and Pd Schottky metal annealed from 400degC to 600degC for 10 min...
Wideband gap semiconductor GaN has received increasing attention for its potential for wide variety of high-power, high- performance switching and high-frequency devices application. In this paper the simultaneous annealing effect at a temperature of 400degC ~700degC in N2 ambient for 12 min on aluminum (1500 Adeg) as an ohmic contact while Pt/Ti (700 Adeg/700 Adeg) bilayer as a Schottky contact on...
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