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To enhance the device sensitivity and detection limit, a gate bias is applied to the catalytic metal of AlGaN/GaN- heterojunction field-effect-transistor (HFET) hydrogen sensors to control the carrier concentration in the channel at operation. The sensors exhibit a good sensitivity at temperatures up to 800degC and a detection limit of 10-ppb H2 in N2. The dependence of the device sensitivity on gate...
Schottky diodes on AlGaN/GaN heterostructures with Pt, IrPt, and PdAg catalytic metals are fabricated and characterized from 200°C to 800°C for H 2 sensing. Over this large range of temperature, the forward current of all the diodes increases with exposure to H 2 gas, which is attributed to Schottky barrier height reduction caused by the atomic hydrogen absorption on the metal–oxide...
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