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This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an NVNA and can be used in a circuit simulator as non-linear models. However, for very high power devices, the NVNA and its required peripheral components...
Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AlGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 × 125 μm) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of output power and maximum gain of 14.8 dB. The second circuit used a 1 mm (8 × 125 μm) HEMT and at 30 V drain bias it produced 57% PAE, 36 dBm of output...
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