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An internally matched GaN power HEMT has been realized at Ku band with a newly developed three-dimensional (3D) electromagnetic (EM) design technique, in which the internal matching networks are 3D modeled and characterized, as a whole. This single chip device with 4mm gate width delivers 17.8W power output with more than 30% PAE over 13.8 to 14.3GHz with few adjustments after assembling.
In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.
Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (??0). In addition to that, the critical operating frequency interval is established.
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