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A 3-stage wideband power amplifier (PA) using a 0.15 pm gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) process from NRC is designed, fabricated, and measured. After characterization of the high electron mobility transistor (HEMT), a non-linear model was created from the measured data for use in the design. The reactively matched 3.8 mm × 1.8 mm PA also uses resistive elements...
This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an NVNA and can be used in a circuit simulator as non-linear models. However, for very high power devices, the NVNA and its required peripheral components...
Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (??0). In addition to that, the critical operating frequency interval is established.
A gallium nitride Doherty power amplifier (GaN Doherty PA) was designed for 2.5 GHz WiMAX band, and a radial-basis function neural network (RBFNN) model is proposed for predicting this amplifier' nonlinear characteristics. Comparison of AM/AM, AM/PM, PAE and Pout curves between the RBFNN model and circuit simulation are given. After 125 epochs, the convergence of this RBFNN model becomes slower and...
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