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Performance evaluation of low-voltage silicon and GaN power FETs is presented for chip-scale DC-DC power converter applications. The circuit calculations are based on an improved circuit model for the FET with accurate description of terminal capacitances and on-resistance. It is shown that GaN power FETs combined with silicon MOS power diodes can potentially lead to nearly 82% power conversion efficiency...
In this paper, a 10 W peak power 2 GHz highly efficient RF pulse width modulation (RF-PWM) based transmitter is presented. RF-PWM signals are generated with a dedicated 65 nm CMOS modulator and subsequently amplified with a GaN Class-E power amplifier (PA). The modulator use extended drain MOS (EDMOS) high voltage transistors to provide the required voltage swing to drive the GaN used as a switch...
This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and...
The paper analyses the IMD3 in power combining system. The relation between isolation of power splitter and IMD3 of system is revealed. Then, the simulation is operated in ADS with GaN FET CGH21240 of Cree Co., Ltd. According to the theory and simulation, the power of output would be higher and IMD3 of the system would be deteriorating, with the isolation of power splitter deteriorating. To approve...
We present the first surface-potential based compact model for RF GaN HEMTs and benchmark our work against both numerical simulations and device measurements. It is expected that such an approach will be superior to other modeling techniques in terms of scalability and model performance for applications where accurate distortion modeling is of paramount importance.
In this work, a deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D threshold analytical model have been proposed and expected to suppress the short-channel-effects for deep submicron GaN-MESFET-based low power applications. The model predicts that the threshold voltage is greatly improved in comparison with the conventional Single-Gate GaN-MESFET. The developed approaches...
This paper presents recent work in the area of gallium nitride (GaN) low-noise microwave integrated circuits. Gallium nitride has attracted interest principally due to its power handling ability. However, its noise performance has received relatively little attention. We discuss the noise performance of several discrete devices, and how they perform in hybrid integrated circuits. The predictive and...
Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AlGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 × 125 μm) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of output power and maximum gain of 14.8 dB. The second circuit used a 1 mm (8 × 125 μm) HEMT and at 30 V drain bias it produced 57% PAE, 36 dBm of output...
A Nonlinear Circuit Model (NCM) combined with device/physical parameters was developed by using hyperbolic tangent (tanh) function and applied to GaN high electron mobility transistors (HEMTs). The equations for the NCM were constructed to reproduce the results of a device physical simulation. Model parameters are similar with the parameters used in the device design. The simulated DC and capacitance...
A systematic, first-pass methodology for designing high efficiency power amplifier (PA) using only large signal CAD models is presented. Detailed analysis using the model reveals significant insights into PA operation as well as the required impedance environment for high efficiency mode of operation. In particular, waveform engineering and empirical loadpull are used to determine the optimal class...
Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged power devices. This paper discusses modeling results obtained for different GaN devices from a small HEMT to a 60-W packaged power transistor. It is shown that the performance state-of-the art GaN HEMTs are...
As GaN technology has developed, first in research laboratories and more recently in multiple commercial device manufacturers, the demand for improved nonlinear models has grown alongside the device process improvements. The need for improved models for GaN is twofold: first, GaN devices have unique nuances in behavior to be addressed; second, there is a desire for improved accuracy to take full advantage...
This paper presents an algorithm for extrinsic element extraction of GaN-HEMTs with physically meaningful parameters calculated from S-parameters measurements at pinch-off. An improved algorithm to extract a 12-element parasitic network is presented, which allows proper modelling of the complex parasitic effects present in devices with large gate periphery. The extraction algorithm is found on a novel...
This paper presents the development of power MMICs in GaN HEMT technology for X-Band T/R modules. We will focus here specifically on the transmit path, which contains the high power amplifier and its power driver. A step by step description of the tasks in order to design this channel will be done, beginning from a short overview of the epitaxial process to the presentation of its measured and simulated...
In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.
Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (??0). In addition to that, the critical operating frequency interval is established.
A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new Ids formulation accurately predicts the asymmetric bell-shaped transconductance (gm) over a large drain-source bias range which is crucial in modeling high-power GaN HEMTs. A method of utilizing a combination of pulsed-gate (PGIV) and pulsed-gate-and-drain (PIV) IV measurements...
GaN based devices offer many perspectives for power conversion applications. To demonstrate the capabilities of III-nitride components, we studied the switching behavior of a GaN DHFET device. We show that the combination of a low input capacitance, a low on-resistance and a high breakdown voltage is the key advantage for GaN components. Moreover the possibility to grow GaN on Si substrates allows...
A gallium nitride Doherty power amplifier (GaN Doherty PA) was designed for 2.5 GHz WiMAX band, and a radial-basis function neural network (RBFNN) model is proposed for predicting this amplifier' nonlinear characteristics. Comparison of AM/AM, AM/PM, PAE and Pout curves between the RBFNN model and circuit simulation are given. After 125 epochs, the convergence of this RBFNN model becomes slower and...
GaN HFETs and MISHFETs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled accurately in...
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