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The paper analyses the IMD3 in power combining system. The relation between isolation of power splitter and IMD3 of system is revealed. Then, the simulation is operated in ADS with GaN FET CGH21240 of Cree Co., Ltd. According to the theory and simulation, the power of output would be higher and IMD3 of the system would be deteriorating, with the isolation of power splitter deteriorating. To approve...
GaN FET technology is facilitating the development of a new level of high power solid state switching performance. FET switches are now obtaining RF power handling levels comparable and even exceeding conventional PIN and mechanical switches up thru microwave frequencies while still offering the traditional advantages common to GaAs switches.
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