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A systematic methodology for designing and implementing a broadband high-efficiency Class-E GaN power amplifier (PA) is proposed. The non-linear model of the GaN device is utilized to prescribe the optimal output impedance for broadband Class-E operation. The impedance of the output-matching network at the fundamental and harmonic frequencies is considered and optimized to cover broadband operation,...
The design and performance of a 0.1 to 5 GHz medium power distributed amplifier is described. The circuit is realized using a low-cost GaN-on-silicon MMIC process featuring 0.5 mum gate length GaN HFETs on a 150 mum thick high resistivity silicon substrate. The circuit was designed using a non-linear FET model and standard passive component models. The first pass circuit demonstrates a saturated output...
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